A sub-ns time-gated CMOS single photon avalanche diode detector for Raman spectroscopy

Author

Nissinen, I. ; Nissinen, J. ; Länsman, A-K ; Hallman, L. ; Kilpelä, A. ; Kostamovaara, J. ; Kögler, M. ; Aikio, M. ; Tenhunen, J.

Author_Institution

Dept. of Electr. & Inf. Eng., Univ. of Oulu, Oulu, Finland

fYear

2011

Firstpage

375

Lastpage

378

Abstract

A time-gated single photon avalanche diode (SPAD) has been designed and fabricated in a standard high voltage 0.35 μm CMOS technology for Raman spectroscopy. The sub-ns time gating window is used to suppress the fluorescence background typical of Raman studies, and also to minimize the dark count rate in order to maximize the signal-to-noise ratio of the Raman signal. The proposed time-gating technique is applied for measuring the Raman spectra of olive oil with a gate window of 300 ps, and shows significant fluorescence suppression.

Keywords

CMOS integrated circuits; Raman spectroscopy; avalanche diodes; Raman spectroscopy; dark count rate; fluorescence background; fluorescence suppression; signal to noise ratio; size 0.35 mum; time gated CMOS single photon avalanche diode detector; time gated single photon avalanche diode; time gating technique; CMOS integrated circuits; Cathodes; Fluorescence; Logic gates; Measurement by laser beam; Photonics; Raman scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European

Conference_Location

Helsinki

ISSN

1930-8876

Print_ISBN

978-1-4577-0707-0

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2011.6044156

Filename

6044156