Title :
Numerical analysis of cosmic radiation-induced failures in power diodes
Author :
Weiss, Christian ; Aschauer, Stefan ; Wachutka, Gerhard ; Härtl, Andreas ; Hille, Frank ; Pfirsch, Frank
Author_Institution :
Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Munich, Germany
Abstract :
Silicon power diodes can run into thermal destruction due to cosmic radiation-induced effects. We performed electro-thermal coupled device simulations in order to explain the failure mechanism. The results are compared to ion irradiation experiments. We find a strong heating located at the point where the incident ion deposits charge with a temperature rise which can explain melting of used materials.
Keywords :
cosmic background radiation; elemental semiconductors; failure analysis; power semiconductor diodes; radiation effects; semiconductor device reliability; silicon; Si; cosmic radiation-induced effects; cosmic radiation-induced failure mechanism; electro-thermal coupled device simulations; ion irradiation experiments; numerical analysis; silicon power diodes; thermal destruction; Anodes; Current density; Heating; Plasma temperature; Silicon; Voltage measurement;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044161
