• DocumentCode
    1729214
  • Title

    Numerical analysis of a novel MTJ stack for high readability and writability

  • Author

    Raychowdhury, A. ; Augustine, C. ; Somasekhar, D. ; Tschanz, J. ; Roy, K. ; De, V.

  • Author_Institution
    Circuit Res. Lab., Intel Corp., Hillsboro, OR, USA
  • fYear
    2011
  • Firstpage
    347
  • Lastpage
    350
  • Abstract
    A novel MTJ stack employing a bidirectional switching mechanism has been proposed. By using a pulsed bidirection current, an MTJ with a SAF free layer and AP fixed layers can be switched through a metastable ferromagnetic state. Numerical simulations suggest high readability (like single barrier structures) and writability (like double barrier structures) of the proposed device.
  • Keywords
    ferromagnetic materials; magnetic tunnelling; numerical analysis; random-access storage; AP fixed layer; MTJ stack; SAF free layer; bidirectional switching mechanism; magnetic tunneling junction stack; metastable ferromagnetic state; numerical analysis; pulsed bidirection current; readability; spin torque transfer RAM cell; synth antiferomagnetic free layer; writability; Current density; Magnetic tunneling; Magnetization; Switches; Switching circuits; Torque; Tunneling magnetoresistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
  • Conference_Location
    Helsinki
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4577-0707-0
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2011.6044163
  • Filename
    6044163
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1729214