Tunable external-cavity laser using MEMS technology

Author

Zhang, X.M. ; Liu, A.Q. ; Tang, D.Y. ; Lu, C. ; Hao, J.Z. ; Asundi, A.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

Volume

2

fYear

2003

Firstpage

1502

Abstract

This paper reports a tunable external-cavity diode laser using a MEMS curved mirror fabricated on a silicon-on-insulator (SOI) wafer. In addition to the many advantages coming with the MEMS technology, this laser has the benefits of low alignment requirement, easy integration/packaging and potentially large wavelength tuning range. It has a size of 1.5 mm/spl times/1 mm (not including the optical fiber), and obtains a wavelength tuning range of 10.6 nm. The output power is about 5 mW at 40 mA injection current (I/sub th/ = 26 mA).

Keywords

microcavity lasers; micromechanical devices; semiconductor lasers; silicon-on-insulator; 1 mm; 1.5 mm; 10.6 nm; 26 mA; 40 mA; 5 mW; MEMS curved mirror fabrication; SOI wafer; Si; diode laser; packaging; silicon-on-insulator; tunable external-cavity laser; wavelength tuning; Diode lasers; Fiber lasers; Laser tuning; Micromechanical devices; Mirrors; Optical fibers; Optical tuning; Packaging; Silicon on insulator technology; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7731-1

Type

conf

DOI

10.1109/SENSOR.2003.1217062

Filename

1217062