Accurate measurements of the charge pumping current due to individual MOS interface traps and interactions in the carrier capture/emission processes

We have successfully measured accurate charge pumping (CP) currents for individual interface traps for the first time, and discovered that the maximum CP current for a single trap is various and usually less than fq (f is the gate pulse frequency, q is the electron charge). From detailed experimental results of the pulse-width dependent CP current, we concluded that the phenomenon is due to the interaction between individual interface traps in the carrier capture/emission processes. These findings are extremely important for describing the carrier trapping/detrapping phenomena in semiconductors using the Shockley-Read-Hall Theory.