• DocumentCode
    1729274
  • Title

    High mobility channel from the prospective of random telegraph noise

  • Author

    Cheung, K.P. ; Campbell, J.P. ; Oates, A.

  • Author_Institution
    Semicond. Electron. Div., NIST, Gaithersburg, MD, USA
  • fYear
    2011
  • Firstpage
    335
  • Lastpage
    338
  • Abstract
    We experimentally verify for the first time that random telegraph noise (RTN) in ultra-scaled MOSFETs is related to the inversion charge density in the channel. We then examine the merit of high mobility channel devices from the RTN prospective. This analysis strongly suggests that RTN is a serious obstacle for high mobility channel adoption.
  • Keywords
    MOSFET; semiconductor device noise; RTN; high mobility channel adoption; high mobility channel devices; inversion charge density; random telegraph noise; ultra-scaled MOSFET; Fluctuations; Logic gates; MOSFETs; Mathematical model; Noise; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
  • Conference_Location
    Helsinki
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4577-0707-0
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2011.6044166
  • Filename
    6044166
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1729274