Title :
High mobility channel from the prospective of random telegraph noise
Author :
Cheung, K.P. ; Campbell, J.P. ; Oates, A.
Author_Institution :
Semicond. Electron. Div., NIST, Gaithersburg, MD, USA
Abstract :
We experimentally verify for the first time that random telegraph noise (RTN) in ultra-scaled MOSFETs is related to the inversion charge density in the channel. We then examine the merit of high mobility channel devices from the RTN prospective. This analysis strongly suggests that RTN is a serious obstacle for high mobility channel adoption.
Keywords :
MOSFET; semiconductor device noise; RTN; high mobility channel adoption; high mobility channel devices; inversion charge density; random telegraph noise; ultra-scaled MOSFET; Fluctuations; Logic gates; MOSFETs; Mathematical model; Noise; Silicon;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044166
