A low cost multi quantum SiGe/Si/Schottky structure for high performance IR detectors

Author

Kolahdouz, M. ; Östling, M. ; Radamson, H.H.

Author_Institution

Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Kista, Sweden

fYear

2011

Firstpage

327

Lastpage

330

Abstract

SiGe(C)/Si(C) multi quantum wells (MQWs) individually or in series with a Schottky diode (SQW) have been characterized as the thermistor materials for high performance bolometer application. The thermal response of the thermistor materials is expressed in temperature coefficient of resistance (TCR) and an excellent value of 6%/K is obtained for the SQWs. The noise power spectrum density was also measured and the K_1/f was estimated as low as 4.7×10^-14. The outstanding characteristics for the SQWs are due to low defect density and high interfacial quality in the multilayer structures. These results are very promising for the rising market of low cost IR detectors in the near future.

Keywords

Ge-Si alloys; Schottky diodes; infrared detectors; semiconductor materials; semiconductor quantum wells; Schottky diode; SiGe-Si; high interfacial quality; high performance IR detectors; low cost multiquantum structure; low defect density; multiquantum wells; temperature coefficient of resistance; thermal response; thermistor materials; Detectors; Noise; Quantum well devices; Schottky diodes; Silicon; Silicon germanium; Thermistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European

Conference_Location

Helsinki

ISSN

1930-8876

Print_ISBN

978-1-4577-0707-0

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2011.6044168

Filename

6044168