Characterization and modelling of Si MOSFETs at liquid helium temperature

Author

Balestra, F. ; Hafex, I.M. ; Ghibaudo, G.

Author_Institution

ENSERG/INPG, Grenoble, France

fYear

1989

Firstpage

48

Lastpage

52

Abstract

A generic analysis of the Si MOSFET operation in the LHT (liquid-helium temperature) range is presented. Analytical models providing current and transconductance transfer characteristics in the linear region and output characteristics in the nonohmic region are proposed. These models rely on a specific mobility law for very low temperature and take into account the effect of source-drain series resistance in both linear and nonlinear regions, which has a drastic influence on the maximum transconductance even for not-too-short channel lengths (L=10 μm). The influence of carrier velocity saturation at LHT is also considered. A specific parameter extraction method that allows the determination of the main MOSFET parameters is presented. Features of the drain voltage dependence of the mobility at very low longitudinal electric field are pointed out

Keywords

carrier mobility; cryogenics; insulated gate field effect transistors; semiconductor device models; 10 micron; 4 K; MOSFET; Si; carrier velocity saturation; channel lengths; current transfer characteristics; drain voltage dependence; generic analysis; linear region; maximum transconductance; mobility law; modelling; nonohmic region; output characteristics; parameter extraction method; source-drain series resistance; transconductance transfer characteristics; very low longitudinal electric field; Analytical models; Attenuation; Circuits; Helium; Leakage current; MOSFETs; Nitrogen; Temperature; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on

Conference_Location

Burlington, VT

Type

conf

DOI

10.1109/LTSE.1989.50180

Filename

50180