A compact charge-based physical model for AlGaN/GaN HEMTs

Author

Yigletu, F.M. ; Iniguez, B. ; Khandelwal, Sourabh ; Fjeldly, T.A.

Author_Institution

Dept. of Electr. Electron. & Autom. Eng., Univ. Rovira i Virgili, Tarragona, Spain

fYear

2013

Firstpage

70

Lastpage

72

Abstract

This work presents a physical compact model for AlGaN/GaN HEMT devices. An analytical model of the drain current has been developed based on models of the charge density in the 2DEG channel but considering only a single energy level. The approach resulted in an accurate and simple current model. The model covers all the different operation regions of a device. Excellent agreements with measured I-V characteristics of a device have showed the validation of the model.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; 2DEG channel; AlGaN-GaN; HEMT device; I-V characteristics; compact charge-based physical model; current model; drain current; single energy level; Aluminum gallium nitride; Analytical models; Gallium nitride; HEMTs; Logic gates; MODFETs; Semiconductor device modeling; HEMTs; power amplifiers; power transistors; semiconductor device modeling; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Sensors and Sensor Networks (WiSNet), 2013 IEEE Topical Conference on

Conference_Location

Austin, TX

Print_ISBN

978-1-4673-3104-3

Electronic_ISBN

978-1-4673-2931-6

Type

conf

DOI

10.1109/WiSNet.2013.6488637

Filename

6488637