Improved extraction of GIDL in FDSOI devices for proper junction quality analysis

In this work, an optimized method to extract GIDL parameters has been used to characterize junction quality in FDSOI devices. This paper gives a practical methodology to properly apply this method: first, it insists on the importance to discriminate the respective contributions of GIDL and gate tunneling in drain current. Then, an activation energy criterion is used to determine the bias conditions that are appropriate to correct application of this method. Experimental values of “tunneling” field and tunneling parameter are extracted, with better reliability than with previous methods. Reliable extractions of the GIDL parameters enable to characterize junction quality independently of junction abruptness and of the impact of traps in the bandgap. This method is successfully applied and results are in agreement with expected results.