Title :
CMOS without doping: Midgap Schottky-barrier nanowire field-effect-transistors for high-temperature applications
Author :
Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo
Author_Institution :
Inst. for Semicond. Technol. & Nanoelectron., Darmstadt Univ. of Technol., Darmstadt, Germany
Abstract :
In this paper we report on a newly developed nanowire based field-effect device-architecture (NWFET) that can be used in high temperature environments. Our devices posess both high temperature stability and low OFF-state current. By changes in source/drain bias-polarity the electrical properties of the NW-devices can be tuned, whether the lowest possible leakage current, or maximum output current is desirable in a specific application.
Keywords :
CMOS integrated circuits; Schottky barriers; field effect transistors; nanowires; semiconductor doping; CMOS; NWFET; doping; high temperature stability; high-temperature applications; low OFF-state current; midgap Schottky-barrier nanowire field-effect-transistors; nanowire based field-effect device-architecture; Charge carriers; Doping; Fabrication; Silicon; Temperature; Temperature measurement; Transistors;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044184
