Title :
Sn-doped InSb thin film Hall elements by MBE and their applications
Author :
Shibasaki, I. ; Okamoto, A. ; Takada, M. ; Goto, H. ; Uchiyama, R.
Author_Institution :
Corp. Res. & Dev. Adm., Asahi Kasei Corp., Yokohama, Japan
Abstract :
Novel Hall devices were developed using single crystal InSb thin films with 1.0 /spl mu/ m thickness deposited by molecular beam epitaxy (MBE) on GaAs substrates. Tin doping of InSb was found to reduce the temperature dependence of resistivity. Hall elements were fabricated using these films, and the electrical and magnetic properties were investigated. We developed a new Hall element with a high sensitivity and small temperature dependence of resistivity, which is expected to be used for applications such as current sensors in the future.
Keywords :
Hall mobility; III-V semiconductors; electrical resistivity; electron mobility; gallium arsenide; indium compounds; magnetic field effects; magnetic sensors; semiconductor doping; semiconductor epitaxial layers; tin; 1 micron; GaAs substrates; GaAs-InSb:Sn; Hall devices; MBE; Sn-doped InSb thin film Hall elements; current sensors; electrical properties; magnetic properties; molecular beam epitaxy; resistivity; sensitivity; single crystal InSb thin films; temperature dependence; Conductivity; Doping; Gallium arsenide; Molecular beam epitaxial growth; Sputtering; Substrates; Temperature dependence; Thin film devices; Tin; Transistors;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1217093
