Sn-doped InSb thin film Hall elements by MBE and their applications

Author

Shibasaki, I. ; Okamoto, A. ; Takada, M. ; Goto, H. ; Uchiyama, R.

Author_Institution

Corp. Res. & Dev. Adm., Asahi Kasei Corp., Yokohama, Japan

Volume

2

fYear

2003

Firstpage

1626

Abstract

Novel Hall devices were developed using single crystal InSb thin films with 1.0 /spl mu/ m thickness deposited by molecular beam epitaxy (MBE) on GaAs substrates. Tin doping of InSb was found to reduce the temperature dependence of resistivity. Hall elements were fabricated using these films, and the electrical and magnetic properties were investigated. We developed a new Hall element with a high sensitivity and small temperature dependence of resistivity, which is expected to be used for applications such as current sensors in the future.

Keywords

Hall mobility; III-V semiconductors; electrical resistivity; electron mobility; gallium arsenide; indium compounds; magnetic field effects; magnetic sensors; semiconductor doping; semiconductor epitaxial layers; tin; 1 micron; GaAs substrates; GaAs-InSb:Sn; Hall devices; MBE; Sn-doped InSb thin film Hall elements; current sensors; electrical properties; magnetic properties; molecular beam epitaxy; resistivity; sensitivity; single crystal InSb thin films; temperature dependence; Conductivity; Doping; Gallium arsenide; Molecular beam epitaxial growth; Sputtering; Substrates; Temperature dependence; Thin film devices; Tin; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7731-1

Type

conf

DOI

10.1109/SENSOR.2003.1217093

Filename

1217093