Title :
Impact of isolation scheme on thermal resistance and collector-substrate capacitance of SiGe HBTs
Author :
You, Shuzhen ; Decoutere, Stefaan ; Van Huylenbroeck, Stefaan ; Sibaja-Hernandez, Arturo ; Venegas, Rafael ; De Meyer, Kristin
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Various isolation schemes consisting of junction isolation, silicon pedestal isolation, deep trench isolation (DTI), airgap deep trench isolation and SOI with DTI are compared in terms of thermal resistance (RTH) and collector-substrate capacitance (CCS). Although to some extent RTH and CCS can be traded, airgap DTI and especially pedestal isolation perform very well, because the former results in strong reduction of CCS, while the latter results in strong reduction of RTH.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; isolation technology; thermal resistance measurement; HBT; SOI; SiGe; airgap DTI; airgap deep trench isolation; collector-substrate capacitance; heterojunction bipolar transistors; junction isolation; silicon pedestal isolation; thermal resistance measurement; Capacitance; Diffusion tensor imaging; Electrical resistance measurement; Junctions; Temperature measurement; Thermal resistance;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044189
