Effect of Be segregation on NiSi/Si Schottky barrier heights

Author

Gudmundsson, Valur ; Hellström, Per-Erik ; Östling, Mikael

Author_Institution

ICT, R. Inst. of Technol., Kista, Sweden

fYear

2011

Firstpage

227

Lastpage

230

Abstract

The effect of Be segregation on the Schottky barrier heights (SBH) of NiSi/Si is studied. Many elements have been shown to modulate the SBH of NiSi. However, group II elements have, to our knowledge, not been investigated before. Be is a double acceptor in Si, making it interesting for SBH modulation towards the valence band. The results show that Be implantation did not change the silicidation process. The SBH modulation was found to be strongly dependent on the silicidation temperature, with a minimum barrier to the valence band Φ_bp=0.28±0.02 eV, for diodes formed at 600 °C. SIMS analysis show the Be dose left at the interface is very low. With such a low dose, modulation cannot be caused by an interface dipole. However, the results can be explained assuming a thin (~4-5 nm) layer of activated Be close to the interface.

Keywords

Schottky barriers; Schottky diodes; beryllium; elemental semiconductors; nickel compounds; secondary ion mass spectra; silicon; Be; NiSi-Si; SBH modulation; SIMS analysis; Schottky barrier heights; diodes; double acceptor; interface dipole; secondary ion mass spectroscopy; silicidation process; temperature 600 degC; valence band; Electrical resistance measurement; Modulation; Resistance; Schottky barriers; Silicidation; Silicon; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European

Conference_Location

Helsinki

ISSN

1930-8876

Print_ISBN

978-1-4577-0707-0

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2011.6044193

Filename

6044193