Title :
A fully integrated bulk-CMOS switch based tunable transformer for RF and antenna matching
Author :
Bakalski, W. ; Thomas, Abu ; Weigel, Robert
Author_Institution :
RF & Protection Devices, Infineon Technol., Neubiberg, Germany
Abstract :
A fully integrated tunable RF impedance matching network based on a transformer topology and on-chip RF switches is presented. Using the Infincon 130nm Bulk-CMOS RF switch process with 2.4 μm alumina top metal, the chip integrates a 4-bit digitally tunable capacitor, a planar transformer with 4 independent windings and 12 taps, an on-chip charge pump and RF switches to control the operating mode of capacitor and the transformer. The circuit offers the possibility to cover the Smith Chart at either low and high impedance up to a VSWR of 10 on the GSM band 790-960 MHz. In by-pass mode the insertion loss is 0.8 dB at 850MHz and features a harmonic generation of - 85 dBc (H2) and -75 dBc (H3) without the need of any external devices or extra controller. The current consumption at 1.5V is 120μA.
Keywords :
CMOS integrated circuits; antennas; capacitors; cellular radio; charge pump circuits; harmonic generation; impedance matching; network topology; radiofrequency integrated circuits; switches; transformer windings; GSM band; RF matching; Smith chart; VSWR; antenna matching; bandwidth 790 MHz to 960 MHz; bulk-CMOS RF switch process; by-pass mode; capacitor operating mode; current 120 muA; current consumption; digitally tunable capacitor; fully integrated bulk-CMOS switch-based tunable transformer; harmonic generation; independent windings; insertion loss; on-chip RF switches; on-chip charge pump; planar transformer; size 130 nm; storage capacity 4 bit; transformer; transformer topology-based fully integrated tunable RF impedance matching network; voltage 1.5 V; Capacitors; Impedance; Insertion loss; Radio frequency; Switches; Transistors; Windings; Antenna; GSM; impedance transformer; matching; mobile phone; power amplifier;
Conference_Titel :
Wireless Sensors and Sensor Networks (WiSNet), 2013 IEEE Topical Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-3104-3
Electronic_ISBN :
978-1-4673-2931-6
DOI :
10.1109/WiSNet.2013.6488650