Title :
Transport characterisation of Ge pMOSFETS in saturation regime
Author :
Diouf, C. ; Cros, A. ; Monfray, S. ; Mitard, J. ; Rosa, J. ; Boeuf, F. ; Ghibaudo, G.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
The limiting carrier velocity concept allowing the determination of the nature of transport is used for the first time in Ge channel MOSFET. The limiting carrier velocity extracted on bulk germanium (Ge) pMOSFET is studied versus temperature. A drift-diffusion dominated transport is demonstrated despite the good transport quality of germanium devices down to 60 nm.
Keywords :
MOSFET; germanium; Ge; drift-diffusion dominated transport; limiting carrier velocity concept; pMOSFET; saturation regime; size 60 nm; transport characterisation; Limiting; Logic gates; MOSFETs; Metals; Scattering; Silicon; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044194
