Title :
Self-aligned S/D regions for InGaAs MOSFETs
Author :
Czornomaz, L. ; El Kazzi, M. ; Caimi, D. ; Mächler, P. ; Rossel, C. ; Bjoerk, M. ; Marchiori, C. ; Fompeyrine, J.
Author_Institution :
IBM Res. - Zurich, Rüschlikon, Switzerland
Abstract :
Self-aligned access regions for indium gallium arsenide (In0.53Ga0.47As) n-type metal-oxide-semiconductor field effect transistors suitable for an extremely-thin III-V-on-insulator approach are investigated. Highly doped n+ source/drain regions are selectively grown by metal-organic vapor phase epitaxy and self-aligned Nickel-InGaAs alloyed metal contacts are obtained using a self-aligned silicide-like process, where different process conditions have been studied. Soft pre-epitaxy cleaning is followed by X-ray photoelectron spectroscopy. Relevant contact and sheet resistances are measured and integration issues are highlighted.
Keywords :
III-V semiconductors; MOSFET; X-ray photoelectron spectra; epitaxial growth; gallium compounds; indium compounds; nickel alloys; semiconductor-insulator boundaries; In0.53Ga0.47As; MOSFET; X-ray photoelectron spectroscopy; contact resistance; extremely-thin III-V-on-insulator approach; indium gallium arsenide n-type metal-oxide-semiconductor field effect transistor; metal-organic vapor phase epitaxy; self-aligned access region; self-aligned nickel-InGaAs alloyed metal contacts; self-aligned silicide-like process; sheet resistance; soft pre-epitaxy cleaning; Annealing; Epitaxial growth; Indium gallium arsenide; Logic gates; Nickel; Resistance;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044195
