Low-noise single Photon Avalanche Diodes in 0.15 μm CMOS technology

Author

Pancheri, Lucio ; Stoppa, David

Author_Institution

Integrated Opt. Sensors & Interfaces, Fondazione Bruno Kessler, Trento, Italy

fYear

2011

Firstpage

179

Lastpage

182

Abstract

Two different Single-Photon Avalanche Diode (SPAD) structures in a standard 0.15-nm CMOS technology are presented. A characterization of the two detectors, having a 10-μm active-area diameter, and monolithically integrated with a passive quenching circuit and a fast comparator is presented. The two devices exhibit respectively a typical dark count rate of 230cps and 160cps, an afterpulsing probability of 2.1% and 1.3% at 30ns dead time, a Photon Detection Probability of 31% and 26 % at λ=470nm and a timing resolution of 170ps and 60ps. The adopted technology is therefore promising for the realization of SPAD-based image sensors with good overall performance.

Keywords

CMOS integrated circuits; avalanche diodes; comparators (circuits); CMOS technology; fast comparator; low noise; monolithically integrated circuit; passive quenching circuit; single photon avalanche diodes; size 0.15 mum; CMOS integrated circuits; CMOS technology; Detectors; Junctions; Photonics; Temperature measurement; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European

Conference_Location

Helsinki

ISSN

1930-8876

Print_ISBN

978-1-4577-0707-0

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2011.6044205

Filename

6044205