Silicon MEMS micro-switch with charge-induced retention

We report for the first time that a silicon MEMS micro-switch has successfully been operated in a manner of having a retention function, which is induced by a flow of stored charges. Depending on the maximum applied voltage, the micro-switches change the state of no bias voltage between ´Switch-on´ and ´Switch-off´ states. This change is reversible and repeatable. The retention function will enable a new type of MEMS micro-switch for mobile wireless terminals, offering low power consumption, simple circuit configuration, and long stability.