High performance 4 GHz FBAR prepared by Pb(Mn,Nb)O3-Pb(Zr,Ti)O3 sputtered thin films

Author

Matsushima, T. ; Yamauchi, N. ; Shirai, T. ; Yoshihara, T. ; Hayasaki, Y. ; Ueda, T. ; Kanno, I. ; Wasa, K. ; Kotera, H.

Author_Institution

Adv. Technol. Dev. Lab., Panasonic Electr. Works, Co., Ltd., Kadoma, Japan

fYear

2010

Firstpage

248

Lastpage

251

Abstract

The 4 GHz film resontors have been fabricated by sputtered Pb(Mn,Nb)O₃-Pb(Zr,Ti)O₃ (PMnN-PZT) thin films. The PMnN-PZT thin films were deposited on (100)MgO substrates. The thin films showed tetragonal crystal structure and highly (001) orientation. The film bulk acoustic resonators (FBAR) composed by PMnN-PZT thin films were fabricated by MEMS technology. RF properties of the resonator were evaluated by VNA (Vector Network Analyzer). The electro-mechanical coupling constant k_t and Q-value for PMnN-PZT thin films were 0.7 and 157, at 4.17 GHz, respectively. These values obtained by sputtered thin films are highest comparing with those of previously reported PZT-BAW resonators.

Keywords

acoustic microwave devices; acoustic resonators; bulk acoustic wave devices; manganese compounds; micromechanical devices; phosphorus compounds; sputtering; thin film devices; zirconium compounds; BAW resonators; FBAR; MEMS technology; PMnN-PZT; Q-value; VNA; electromechanical coupling constant; film bulk acoustic resonators; frequency 4.17 GHz; resonator RF properties; sputtered thin films resonators; substrates; tetragonal crystal structure; vector network analyzer; Couplings; Crystals; Film bulk acoustic resonators; Films; Radio frequency; Resonator filters; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium (FCS), 2010 IEEE International

Conference_Location

Newport Beach, CA

ISSN

1075-6787

Print_ISBN

978-1-4244-6399-2

Type

conf

DOI

10.1109/FREQ.2010.5556334

Filename

5556334