DocumentCode :
1730565
Title :
Four-mask process based on spacer technology for scaled-down lateral NEM electrostatic actuators
Author :
Lee, Daesung ; Lee, W. Scott ; Mitra, Subhasish ; Howe, Roger T. ; Wong, H. -S Philip
Author_Institution :
Stanford Univ., Stanford, CA, USA
fYear :
2010
Firstpage :
35
Lastpage :
36
Abstract :
This paper presents a four-mask fabrication process of lateral nanoelectromechanical (NEM) electrostatic actuators based on spacer technology. Critical dimensions of the actuators, i.e., the beam width and the gap size between the movable and fixed electrodes can be made smaller than the lithographic resolution by creating nitride spacers on an oxide hardmask followed by selective etching of the oxide hardmask. The combined oxide hardmask, nitride spacer, and another mask (photoresist mask) is then transferred to an underlying polysilicon structural layer to create lateral NEM electrostatic actuators with narrow beam and narrow gap.
Keywords :
electrostatic actuators; elemental semiconductors; etching; masks; nanoelectromechanical devices; photoresists; silicon; Si; beam width; four-mask fabrication process; gap size; lithographic resolution; nitride spacer; oxide hardmask; photoresist mask; polysilicon structural layer; scaled-down lateral NEM electrostatic actuators; selective etching; spacer technology; Electrodes; Electrostatic actuators; Etching; Lithography; Resists; Resonant frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical MEMS and Nanophotonics (OPT MEMS), 2010 International Conference on
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-8926-8
Electronic_ISBN :
978-1-4244-8925-1
Type :
conf
DOI :
10.1109/OMEMS.2010.5672196
Filename :
5672196
Link To Document :
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