Title :
A device array for efficient bias-temperature instability measurements
Author :
Sato, Takashi ; Kozaki, Tadamichi ; Uezono, Takumi ; Tsutsui, Hiroshi ; Ochi, Hiroyuki
Author_Institution :
Dept. of Commun. & Comput. Eng., Kyoto Univ., Kyoto, Japan
Abstract :
A device array suitable for efficiently collecting statistical information on bias-temperature instability (BTI) parameters of a large number of transistors is presented. The proposed array structure substantially shortens measurement time of threshold voltage shifts under BTI conditions by parallelizing stress periods of multiple devices while maintaining 0.2mV precision. An implementation of BTI array consisting of 128 devices successfully validates stress-pipelining concept. Log-normal distributions of time exponents are experimentally observed.
Keywords :
log normal distribution; stability; statistical analysis; temperature measurement; transistors; BTI array; device array; efficient bias-temperature instability measurements; log-normal distributions; stress-pipelining concept; transistors; voltage 0.2 mV; voltage shifts; Arrays; Semiconductor device measurement; Stress; Stress measurement; Threshold voltage; Time measurement; Voltage measurement;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044214
