TCAD study of the detection mechanisms in silicon nanoribbon-based gas sensors

Author

Silvestri, Luca ; Reggiani, Susanna ; Passi, Vikram ; Ravaux, Florent ; Dubois, Emmanuel ; Raskin, Jean-Pierre ; Clavaguera, Simon ; Carella, Alexandre ; Celle, Caroline ; Simonato, Jean-Pierre

Author_Institution

ARCES, Univ. of Bologna, Bologna, Italy

fYear

2011

Firstpage

131

Lastpage

134

Abstract

An extensive simulation analysis of silicon-nanoribbon field-effect transistors for the detection of chemical warfare agents has been performed through investigation of the physical behavior of the device. An accurate modeling of the nanoribbon interfaces has been carried out before and after gas exposure by combining simulation, characterization techniques and validation against experiments. A quantitative description of the physical mechanisms involved in the gas detection has been obtained.

Keywords

field effect transistors; gas sensors; nanostructured materials; silicon; technology CAD (electronics); TCAD study; chemical warfare agents; detection mechanisms; field effect transistors; gas detection; gas sensors; quantitative description; silicon nanoribbon; Gas detectors; Interference; Numerical models; Photonic band gap; Signal to noise ratio; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European

Conference_Location

Helsinki

ISSN

1930-8876

Print_ISBN

978-1-4577-0707-0

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2011.6044217

Filename

6044217