• DocumentCode
    1730984
  • Title

    Design and integration of strained SiGe/Si hetero-structure CMOS transistors

  • Author

    Huang, Chien-Chao ; Yeo, Yee-Chia ; Chen, Shih-Chang ; Yang, Fu-Liang ; Chi, Min-Hwa

  • Author_Institution
    Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
  • fYear
    2005
  • Firstpage
    23
  • Lastpage
    24
  • Abstract
    We report the integration of a strained-Si0.75Ge0.25/Si hetero-structure channel in a manufacturable CMOS process using selective epitaxy. The enhancement of drive current is demonstrated for pMOSFETs. The concerns on device design for strained SiGe/Si hetero-structure transistors are discussed, particularly the dependence of hole mobility enhancement.
  • Keywords
    Ge-Si alloys; MOSFET; epitaxial growth; hole mobility; CMOS transistor strained hetero-structure; Si0.75Ge0.25-Si; drive current enhancement; hole mobility enhancement; manufacturable CMOS process; pMOSFET; selective epitaxy; CMOS process; CMOS technology; Epitaxial growth; Fabrication; Germanium silicon alloys; Implants; MOSFETs; Semiconductor device manufacture; Silicon germanium; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
  • ISSN
    1930-8868
  • Print_ISBN
    0-7803-9058-X
  • Type

    conf

  • DOI
    10.1109/VTSA.2005.1497066
  • Filename
    1497066
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1730984