A 35-60 GHz single-pole double-throw(SPDT) switching circuit using direct contact MEMS switches and double resonance technique

In this paper, a single-pole double-throw(SPDT) switching circuit was demonstrated using direct contact MEMS switches and double resonance technique for Q-band and V-band applications. The size of the fabricated SPDT switching circuit is about 1 mm/spl times/2 mm. The direct contact MEMS switches are formed on the CPW transmission lines and actuated with electrostatic force. The fabricated single-pole single-throw(SPST) MEMS switch shows the insertion loss of 0.34 dB and the isolation of 15.5 dB at 50 GHz, respectively. The responses of the fabricated SPDT switching circuit were measured with the frequencies from 0 to 100 GHz. The insertion loss is below 1 dB and isolation is better than 19 dB from 35 GHz to 60 GHz. At the center frequency of 47 GHz, the insertion loss is measured 0.45 dB and isolation is 22 dB. The actuation voltage of the switch is 35V.