Title :
Characteristics of high performance PFETs with embedded SiGe source/drain and <100> channels on 45° rotated wafers
Author :
Ouyang, Qiqing Christine ; Ieong, Meikei ; Fischetti, Massimo ; Panda, Siddhartha ; Boyd, Diane ; Rim, Ken ; Ott, John A.
Author_Institution :
IBM Semicond. R&D Center, T. J Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
PFETs with embedded-eSiGe S/D are demonstrated for the first time on rotated wafers with <100> channels. Improved short-channel behavior is achieved. The performance variation is reduced because hole mobility is less sensitive to both transverse and longitudinal stress. Hence, embedded SiGe on rotated wafers have improved robustness for short-channel pFETs.
Keywords :
Ge-Si alloys; MOSFET; hole mobility; SiGe; embedded-eSiGe source/drain; hole mobility; longitudinal stress; rotated wafers; short-channel behavior; short-channel pFET; transverse stress; CMOS process; CMOS technology; Compressive stress; Degradation; Germanium silicon alloys; Isolation technology; Microelectronics; Research and development; Robustness; Silicon germanium;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497068
