• DocumentCode
    1731038
  • Title

    Characteristics of high performance PFETs with embedded SiGe source/drain and <100> channels on 45° rotated wafers

  • Author

    Ouyang, Qiqing Christine ; Ieong, Meikei ; Fischetti, Massimo ; Panda, Siddhartha ; Boyd, Diane ; Rim, Ken ; Ott, John A.

  • Author_Institution
    IBM Semicond. R&D Center, T. J Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2005
  • Firstpage
    27
  • Lastpage
    28
  • Abstract
    PFETs with embedded-eSiGe S/D are demonstrated for the first time on rotated wafers with <100> channels. Improved short-channel behavior is achieved. The performance variation is reduced because hole mobility is less sensitive to both transverse and longitudinal stress. Hence, embedded SiGe on rotated wafers have improved robustness for short-channel pFETs.
  • Keywords
    Ge-Si alloys; MOSFET; hole mobility; SiGe; embedded-eSiGe source/drain; hole mobility; longitudinal stress; rotated wafers; short-channel behavior; short-channel pFET; transverse stress; CMOS process; CMOS technology; Compressive stress; Degradation; Germanium silicon alloys; Isolation technology; Microelectronics; Research and development; Robustness; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
  • ISSN
    1930-8868
  • Print_ISBN
    0-7803-9058-X
  • Type

    conf

  • DOI
    10.1109/VTSA.2005.1497068
  • Filename
    1497068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1731038