Title :
70nm DRAM technology for DDR-3 application
Author :
Kim, Hyungtak ; Kim, Sangho ; Lee, Sungsam ; Jang, Sungho ; Kim, Ji-hoon ; Sung, Yangsoo ; Park, Junwoong ; Kwon, Saehan ; Jun, Sangmin ; Park, Wontae ; Han, Daehan ; Cho, Changhyun ; Kim, Yungi ; Kim, Kinam ; Ryu, Byungil
Author_Institution :
Device Solution Network, Samsung Electron. Co. Ltd., Yongin, South Korea
Abstract :
For the first time, we developed 70nm DRAM technology applicable to a manufacturing level. This technology is aimed at DDR-3 application, which requires low-voltage operation and high speed performance. Fully working 70nm DRAMs were realized combining W-gate dual poly process, recess-channel-array-transistors (RCATs), and MIM cell capacitor module. In this paper, we present performance of 70nm node DRAMs which qualifies DDR-3 application requirement.
Keywords :
DRAM chips; low-power electronics; nanotechnology; 70 nm; DDR-3 application; DRAM technology; W-gate dual poly process; high speed performance; low power electronics; low-voltage operation; CMOS technology; Capacitance; Doping; Fabrication; Implants; Logic devices; MIM capacitors; MOSFETs; Random access memory; Voltage;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497069
