DocumentCode
1731176
Title
Integration technologies for scalable high density MRAM
Author
Park, J.H. ; Jeong, W.C. ; Oh, J.H. ; Jeong, C.W. ; Shin, J.M. ; Hwang, Y.N. ; Ahn, S.J. ; Lee, S.-H. ; Lee, S.Y. ; Ryoo, K.C. ; Jonghyun Park ; Yang, F. ; Koh, G.H. ; Jeong, G.T. ; Jeong, H.S. ; Kim, Kinam
Author_Institution
Semicond. R&D Div., Samsung Electron. Co., Ltd., Yongin, South Korea
fYear
2005
Firstpage
39
Lastpage
40
Abstract
We investigate the key factors for scalable high density MRAM. Specifically we examine problems such as large switching field, small sensing margin and writing disturbance following a decrease in size. We demonstrate these problems and suggest several solutions for realizing high density MRAM.
Keywords
magnetic storage; random-access storage; high density MRAM; magnetic random access memory; sensing margin; switching field; writing disturbance; CMOS process; CMOS technology; Energy barrier; Joining processes; Research and development; Scalability; Spin polarized transport; Voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
ISSN
1930-8868
Print_ISBN
0-7803-9058-X
Type
conf
DOI
10.1109/VTSA.2005.1497074
Filename
1497074
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