• DocumentCode
    1731232
  • Title

    First demonstration of phase change memory device using solution processed GeTe nanoparticles

  • Author

    Jeyasingh, Rakesh G D ; Caldwell, Marissa A. ; Milliron, Delia J. ; Wong, H. -S Philip

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2011
  • Firstpage
    99
  • Lastpage
    102
  • Abstract
    We present the first demonstration of a functional Phase Change Memory (PCM) device fabricated using solution processed GeTe phase change nanoparticle. The device shows the characteristic memory behavior of crystallization and threshold switching. The cycling endurance of the device is up to 100 cycles. The cells are currently the best performing solution processed phase change material based memory devices reported so far.
  • Keywords
    crystallisation; germanium compounds; nanoelectronics; nanoparticles; phase change memories; GeTe; characteristic memory behavior; crystallization; functional phase change memory device; phase change nanoparticle; threshold switching; Electrodes; Films; Nanoparticles; Phase change materials; Phase change random access memory; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
  • Conference_Location
    Helsinki
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4577-0707-0
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2011.6044225
  • Filename
    6044225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1731232