Contact resistance of TiW to ultra-thin phase change material layers

Author

Roy, Deepu ; Klootwijk, Johan H. ; Gravesteijn, Dirk J. ; Wolters, Rob A M

Author_Institution

Central R&D, NXP Semicond., Eindhoven, Netherlands

fYear

2011

Firstpage

87

Lastpage

90

Abstract

In this article we report on the change in contact resistance of TiW to doped-Sb₂Te in the 5nm-50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb₂Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ρ_C. Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb₂Te interface.

Keywords

antimony compounds; contact resistance; metal-insulator boundaries; space charge; titanium alloys; tungsten alloys; crystalline state; electrical contact resistance; size 5 nm to 50 nm; space-charge region; specific contact resistance; ultrathin phase change material layers; Contact resistance; Electrical resistance measurement; Kelvin; Metals; Phase change materials; Space charge; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European

Conference_Location

Helsinki

ISSN

1930-8876

Print_ISBN

978-1-4577-0707-0

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2011.6044228

Filename

6044228