• DocumentCode
    1731364
  • Title

    Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance

  • Author

    Endo, Kazuhiko ; Ishikawa, Yuki ; Matsukawa, Takashi ; Liu, Yongxum ; Oruchi, S. ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Yamauchi, Hiromi ; Masahara, Meishoku

  • Author_Institution
    Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2011
  • Firstpage
    83
  • Lastpage
    86
  • Abstract
    We have successfully fabricated FinFETs with a 25-nm-short extension of the source/drain by using atomic layer deposition of SiO2 thin films for the side-wall spacer of the gate electrode. The performance of the FinFET has been successfully improved by the reduction of the parasitic resistance.
  • Keywords
    MOSFET; atomic layer deposition; semiconductor thin films; silicon compounds; FinFET; SiO2 thin films; atomic layer deposition; gate electrode; parasitic resistance; size 25 nm; source/drain; thin sidewall spacer; Atomic layer deposition; Films; FinFETs; Ion implantation; Logic gates; Plasmas;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
  • Conference_Location
    Helsinki
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4577-0707-0
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2011.6044229
  • Filename
    6044229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1731364