Title :
Hot-carrier degradation on the analogue/RF performances of a 90nm RF-CMOS technology demonstrated in a 900MHz low-power LNA
Author :
Ramos, J. ; Jeamsaksiri, W. ; Mercha, A. ; Thijs, S. ; Linten, D. ; Wambacq, P. ; De Jaeger, B. ; Debusschere, I. ; Biesemans, S. ; Decoutere, S.
Author_Institution :
Inter-Univ. Micro-Electron. Center, Leuven, Belgium
Abstract :
Hot-carrier stress impact on the analogue/RF performances of a state-of-the-art 90nm RF-CMOS technology, demonstrated on RF-circuits operating up to 5Ghz, is shown for the first time in a 900MHz LNA biased in moderate inversion. The trade-off between low-power consumption and lifetime is discussed, addressing limitations and pointing to possible solutions.
Keywords :
CMOS integrated circuits; UHF amplifiers; hot carriers; low-power electronics; radiofrequency integrated circuits; 90 nm; 900 mHz; RF-CMOS technology; RF-circuits; analogue/RF performance; hot-carrier degradation; hot-carrier stress; low noise amplifier; low-power consumption; CMOS technology; Circuit synthesis; Degradation; Hot carriers; Impedance matching; RF signals; Radio frequency; Standards publication; Stress; System-on-a-chip;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497082
