DocumentCode :
1731441
Title :
A silicon die as a frequency source
Author :
McCorquodale, M.S. ; Gupta, B. ; Armstrong, W.E. ; Beaudouin, R. ; Carichner, G. ; Chaudhari, P. ; Fayyaz, N. ; Gaskin, N. ; Kuhn, J. ; Linebarger, D. ; Marsman, E. ; O´Day, J. ; Pernia, S. ; Senderowicz, D.
Author_Institution :
Silicon Freq. Control, Integrated Device Technol., Inc., Sunnyvale, CA, USA
fYear :
2010
Firstpage :
103
Lastpage :
108
Abstract :
A monolithic and unpackaged silicon die is presented as a frequency source suitable for quartz crystal resonator (XTAL) and oscillator (XO) replacement. The frequency source is referenced to a free-running, frequency-trimmed and temperature-compensated 3 GHz RF LC oscillator. A programmable divider array enables the device to provide frequencies ranging from 6 to 133 MHz. A post-processed Faraday shield contains fringing electromagnetic fields and enables the device to be delivered in unpackaged form such that it can be assembled into any package or via any assembly technique. The device dissipates approximately 2mA from a 1.8-3.3 V power supply and drifts no more than ±300ppm over all operating conditions including a panel of industry-standard reliability tests.
Keywords :
VHF oscillators; crystal resonators; dividing circuits; electronics packaging; elemental semiconductors; microwave oscillators; programmable circuits; silicon; Si; assembly technique; free-running frequency-trimmed RF LC oscillator; frequency 3 GHz; frequency 6 MHz to 133 MHz; frequency source; fringing electromagnetic fields; industry-standard reliability tests; monolithic silicon die; oscillator replacement; post-processed Faraday shield; programmable divider array; quartz crystal resonator; temperature-compensated RF LC oscillator; unpackaged silicon die; voltage 1.8 V to 3.3 V; Frequency control; Frequency measurement; Oscillators; Performance evaluation; Resonant frequency; Silicon; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium (FCS), 2010 IEEE International
Conference_Location :
Newport Beach, CA
ISSN :
1075-6787
Print_ISBN :
978-1-4244-6399-2
Type :
conf
DOI :
10.1109/FREQ.2010.5556366
Filename :
5556366
Link To Document :
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