Title :
A comprehensive varactor study for advanced CMOS RFIC design
Author :
Huang, C.F. ; Wu, C.C. ; Chen, C.H. ; Ho, C.C. ; Chan, Y.J. ; Chang, C.S. ; Chao, C.P. ; Che, G.J.
Abstract :
The key performance index related to RF circuit design for a portfolio of varactor structures, N+/Nwell MOS varactor (N+/NW MOSVAR). P+/Pwell MOSVAR (P+/PW MOSVAR) and junction varactor (JVAC) were studied using advanced 0.18μm to 90nm RF-CMOS technologies. The engineering and trade-offs for quality factor (Q-factor), tuning ratio (TR = Cmax / Cmin), capacitance mismatch and flicker noise for different device structure, geometry size, operation and process conditions were compared to provide a comprehensive guideline for selecting varactor structures and dimensions during advanced RFIC design.
Keywords :
CMOS integrated circuits; MIS devices; Q-factor; flicker noise; integrated circuit design; radiofrequency integrated circuits; varactors; N+/NW MOSVAR; N+/Nwell MOS varactor; P+/PW MOSVAR; P+/Pwell MOSVAR; RF circuit design; RF-CMOS technologies; advanced CMOS RFIC design; capacitance mismatch; device structure; flicker noise; geometry size; junction varactor; process conditions; quality factor; tuning ratio; varactor structures; varactor study; CMOS technology; Circuit optimization; Circuit synthesis; Design engineering; Performance analysis; Portfolios; Q factor; Radio frequency; Radiofrequency integrated circuits; Varactors;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497083
