Title :
Recent advances in MRAM technology
Author :
Gallagher, W.J. ; Abraham, D. ; Assefa, S. ; Brown, S.L. ; DeBrosse, J. ; Gaidis, M. ; Galligan, E. ; Gow, E. ; Hughes, B. ; Hummel, J. ; Kanakasabapathy, S. ; Kaiser, Christian ; Lamorey, M. ; Maffit, T. ; Milkove, K. ; Lu, Yu ; Nowak, J. ; Rice, P. ; Sa
Author_Institution :
IBM Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
MRAM technology offers an attractive combination of performance, density, low power, non-volatility, and write endurance. While first stand-alone MRAM products appear poised for introduction, major technology advances are also being reported. In this review, we discuss our work on a 16Mbit demonstrator chip with a 1.42 μm2 cell in 180 nm technology in the context of recent world wide advances in MRAM technology. These include a cell architecture that resolves the magnetic half select write disturb issue and an advanced tunnel barrier material, MgO, that promises much larger signals for MRAM read operations.
Keywords :
magnesium compounds; magnetic storage; memory architecture; random-access storage; 180 nm; MRAM technology; MgO; cell architecture; demonstrator chip; magnetic half select write disturb; magnetic random access memory; read operation; tunnel barrier material; CMOS technology; Histograms; Magnetic hysteresis; Magnetic materials; Magnetic tunneling; Signal design; Signal resolution; Temperature; Tunneling magnetoresistance; Voltage control;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497086
