Title :
Fundamentals and current status of steep-slope tunnel field-effect transistors
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
The tunnel field-effect transistor (TFET) utilizes a metal-oxide-semiconductor MOS structure to control the Zener tunneling current in a p+n+ junction. Current understanding and status in the development of TFETs with steep inverse-subthreshold-slope is reviewed.
Keywords :
MIS structures; field effect transistors; tunnel transistors; Zener tunneling current; metal-oxide-semiconductor MOS structure; p+n+ junction; steep inverse-subthreshold-slope; steep-slope tunnel field-effect transistors; FETs; Heterojunctions; Logic gates; MOSFET circuits; Tunneling;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044238
