Abstract :
The following topics are dealt with: nanoelectronics; CMOS technology; organic semiconductor technology; photonics-electronics integration; brain-machine interface; steep-slope tunnel field-effect transistor; multimode-multiband transceivers; wireless communication; wireless medical implant technology; DC-DC converters; high temperature annealing; La-silicate MOSFET; oxidation; gate stacks; FinFET performance; ultra-thin phase change material layers; thin interfacial oxide layer; vibrational energy harvesting applications; 3D stack packaging solution; silicon nanoribbon-based gas sensors; integrated circuit reliability simulation; hot-carrier degradation modelling; CMOS imagers; large-signal GaN HEMT electro-thermal model; low-noise single photon avalanche diodes; optimised silicon photomultipliers; high-speed PNP PIN phototransistors; 3D SONOS device; poly-Si thin film transistor SONOS memory cells; vertical pillar transistor; Schottky barrier heights; n-type doped germanium contact resistance extraction; electro-thermal characterisation; dual N/P-LDMOS transistor; tunneling field-effect transistor; electron-hole bilayer tunnel FET; strained Si heterojunction bipolar transistors; energy efficient discrete power trench MOSFET; low-power nanowire FET; bilayer graphene transistors; self-aligned double-gate suspended-body single-walled carbon nanotube field-effect-transistors; IR detectors; CMOS process; random telegraph noise; metallic thin films; electromagnetic solver; power diodes; integrated passive device; 3D interconnected above-IC inductors; sub-ns time-gated CMOS single photon avalanche diode detector; and two-stage trigger silicon-controller rectifier.
Keywords :
CMOS integrated circuits; MOSFET; Schottky barriers; avalanche diodes; brain-computer interfaces; carbon nanotubes; elemental semiconductors; energy harvesting; graphene; high electron mobility transistors; inductors; infrared detectors; integrated circuit interconnections; metallic thin films; nanoelectronics; nanowires; organic semiconductors; oxidation; phase change materials; phototransistors; prosthetics; rectifiers; telemedicine; 3D SONOS device; 3D interconnected above-IC inductors; 3D stack packaging solution; CMOS imagers; CMOS process; CMOS technology; DC-DC converters; FinFET performance; IR detectors; La-silicate MOSFET; Schottky barrier heights; bilayer graphene transistors; brain-machine interface; dual N-P-LDMOS transistor; electro-thermal characterisation; electromagnetic solver; electron-hole bilayer tunnel FET; energy efficient discrete power trench MOSFET; gate stacks; high temperature annealing; high-speed PNP PIN phototransistors; hot-carrier degradation modelling; integrated circuit reliability simulation; integrated passive device; large-signal GaN HEMT electro-thermal model; low-noise single photon avalanche diodes; low-power nanowire FET; metallic thin films; multimode-multiband transceivers; n-type doped germanium contact resistance extraction; nanoelectronics; optimised silicon photomultipliers; organic semiconductor technology; oxidation; photonics-electronics integration; poly-Si thin film transistor SONOS memory cells; power diodes; random telegraph noise; self-aligned double-gate suspended-body single-walled carbon nanotube field-effect-transistors; silicon nanoribbon-based gas sensors; steep-slope tunnel field-effect transistor; strained Si heterojunction bipolar transistors; sub-ns time-gated CMOS single photon avalanche diode detector; thin interfacial oxide layer; tunneling field-effect transistor; two-stage trigger silicon-controller rectifier; ultra-thin phase change material layers; vertical pillar transistor; vibrational energy harvesting applications; wireless communication; wireless medical implant technology;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044245
