Title :
A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates
Author :
Wen, H.-C. ; Choi, K. ; Majhi, P. ; Alshareef, H. ; Huffman, C. ; Lee, B.H.
Author_Institution :
Philips, Austin, TX, USA
Abstract :
Systematic analysis of the influence of nitrogen on the work function of TaN, HfN, and HfTiN was performed. It was observed that the effective work function of these materials could be modulated by ∼300 meV by varying the nitrogen content in the film even after 1000 °C anneal. Additionally, there is minimal observable influence of high nitrogen flow rates during the plasma deposition of metal nitrides on the integrity of the hafnium based high-k dielectrics.
Keywords :
annealing; dielectric thin films; hafnium compounds; nitridation; plasma deposition; tantalum compounds; work function; 1000 C; 300 meV; HfTiN; TaN; high-k dielectrics; metal nitrides; nitrided metal gates; plasma deposition; work function; Annealing; Dielectric materials; Etching; Hafnium; High K dielectric materials; MOS devices; Nitrogen; Plasma applications; Plasma materials processing; Plasma temperature;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497097
