Title :
Higher-order dielectrically transduced bulk-mode ring resonator with low motional resistance
Author :
Ziaei-Moayyed, Maryam ; Howe, Roger T.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
This paper reports internal dielectric transduction of the 41st radial bulk-mode of a ring resonator at 2.79 GHz with a quality factor exceeding 11,500 in air. The transducer electrodes are integrated within the vibrating structure in a dense serpentine pattern, with the dielectric-filled gaps strategically placed on the nodal lines to excite the 41st order bulk radial mode. The serpentine dielectric transduction results in a low motional resistance of less than 500 Ω, which can be detected by direct two-port transmission measurements. The “notched” ring design allows for anchoring this resonator at the center nodal line of the ring, resulting in higher Q and lower motional resistance. This resonator is fabricated by a double nanogap process, where 30 nm silicon nitride sidewall layers are formed using a combination of optically defined trenches and deposition of a high-κ dielectric followed by a doped polysilicon layer.
Keywords :
Q-factor; dielectric resonators; electrostatic devices; high-k dielectric thin films; micromechanical resonators; 41st order bulk radial mode; center nodal line; dense serpentine pattern; dielectric-filled gaps; direct two-port transmission measurements; doped polysilicon layer; double nanogap process; electrostatic transduced micromechanical resonators; frequency 2.79 GHz; high-κ dielectric deposition; higher-order dielectric transduced bulk-mode ring resonator; internal dielectric transduction; low motional resistance; notched ring design; optical defined trenches; quality factor; radial bulk-mode ring resonator; serpentine dielectric transduction; silicon nitride sidewall layers; size 30 nm; transducer electrodes; vibrating structure; Dielectrics; Electrical resistance measurement; Optical ring resonators; Q factor; Resistance; Resonant frequency; Transducers;
Conference_Titel :
Frequency Control Symposium (FCS), 2010 IEEE International
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-6399-2
DOI :
10.1109/FREQ.2010.5556382