Title :
Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS
Author :
Wen, H.-C. ; Choi, K. ; Lysaght, P. ; Majhi, P. ; Alsharee, H. ; Huffman, C. ; Harris, R. ; Luan, Huanbo ; Lee, B.H. ; Yamada, N. ; Wickramanayaka, S.
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
A material system Ru-Hf alloys was evaluated for its potential as future generation dual-metal CMOS electrode. It was observed that the effective work function of the alloy could be modulated from 4.3 to 4.8 eV by varying the Hf content in the Ru-Hf alloy from 65% to 0%. Additionally, comparison between the Ru-Hf (1:1) with Ru-Ta (1:1) suggests that the two alloy systems exhibit similar behavior in work function modulation.
Keywords :
CMOS integrated circuits; hafnium alloys; ruthenium alloys; work function; 4.3 to 4.8 eV; RuHf; RuHf alloys; dual metal CMOS; gate electrodes; work function engineering; work function modulation; Control systems; Dielectric measurements; Dielectric substrates; Electrodes; Hafnium; High K dielectric materials; High-K gate dielectrics; Instruments; MOS capacitors; X-ray diffraction;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497098
