DocumentCode :
1731939
Title :
SiC devices offer improved reliability for T&D applications
Author :
Bassett, Roger ; Ballad, John
Author_Institution :
AREVA T&D Technology Centre - United Kingdom
fYear :
2005
Firstpage :
1
Lastpage :
3
Abstract :
The purpose of this paper is to identify and describe the key enabling roles that SiC power semiconductor devices will play in future envisaged electricity networks. Prospective SiC devices have higher voltage rating, are faster switching and can operate at higher temperature than their Si counterparts. Hence power electronic (PE) equipment using SiC devices will have, not only much lower dissipation, but also a lower component count and thus be more compact and reliable.
fLanguage :
English
Publisher :
iet
Conference_Titel :
Electricity Distribution, 2005. CIRED 2005. 18th International Conference and Exhibition on
Conference_Location :
Turin, Italy
Type :
conf
Filename :
5428172
Link To Document :
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