• DocumentCode
    1731950
  • Title

    Towards optimally shaped fins in p-channel tri-gate FETs: can fin height be reduced further?

  • Author

    Dixit, A. ; Anil, K.G. ; Mercha, A. ; Collaert, N. ; Bros, S. ; Richard, O. ; Rooyackers, R. ; Jurczak, M. ; De Meyer, K. ; Goodwin, M.

  • Author_Institution
    IMEC, Heverlee, Belgium
  • fYear
    2005
  • Firstpage
    112
  • Lastpage
    113
  • Abstract
    We explore the scaling capability of tri-gate pFETs by comparing their dc and ac-electrical performance as a function of fin height. A 24 % reduction in drive current (at IOFF = 10-7 A/μm) is observed as the fin height, is reduced from 58 to 40 nm.
  • Keywords
    field effect transistors; 40 nm; 58 nm; ac-electrical performance; dc-electrical performance; fin height; optimally shaped fins; p-channel tri-gate FET; CMOS technology; Capacitance-voltage characteristics; Etching; FETs; Fabrication; FinFETs; Flexible manufacturing systems; Low-frequency noise; Positron emission tomography; Shape;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
  • ISSN
    1930-8868
  • Print_ISBN
    0-7803-9058-X
  • Type

    conf

  • DOI
    10.1109/VTSA.2005.1497101
  • Filename
    1497101
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1731950