Title :
The Vth controllability of 5nm body-tied CMOS FinFET
Author :
Cho, Hye Jin ; Choe, Jeong Dong ; Han, Jeongnam ; Kim, Dongchan ; Park, Heungsik ; Goo, Doohoon ; Li, Ming ; Oh, Chang Woo ; Kim, Dong-Won ; Kim, Tae Yong ; Lee, Choong-Ho ; Park, Donggun ; Kim, Kinam ; Ryu, Byung-Il
Author_Institution :
Semicond. R&D Div., Samsung Electron. Co., Gyeonggi-Do, South Korea
Abstract :
In this paper, we demonstrate a 5nm width body-tied CMOS finFET on bulk Si for the first time. Also the threshold voltage control of the 5nm finFET is shown by using channel and pocket doping profile optimization along the narrow active fin. The excellent performance of finFET such as an excellent subthreshold swing (SS), and drain induced barrier lowering (DIBL) characteristics were found. And the systemic analyses of electrical characteristics dependencies on the fin width were evaluated for various fin width (5 ∼ 100nm).
Keywords :
CMOS integrated circuits; MOSFET; doping profiles; voltage control; 5 nm; Vth controllability; body-tied CMOS FinFET; doping profile optimization; drain induced barrier lowering; electrical characteristics; fin width; narrow active fin; subthreshold swing; threshold voltage control; CMOS process; CMOS technology; Controllability; Doping; FinFETs; Immune system; MOS devices; Manufacturing processes; Threshold voltage; Voltage control;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497103
