DocumentCode
1732233
Title
Effect of blind hole depth and shape of solder joint on the reliability of through silicon via (TSV)
Author
Wan, Zhimin ; Luo, Xiaobing ; Liu, Sheng
Author_Institution
Sch. of Energy & Power Eng., Huazhong Univ. of Sci & Tech, Wuhan, China
fYear
2011
Firstpage
1657
Lastpage
1661
Abstract
TSV is a very hot topic today. It enables higher pin-out and finer pitch. However, the thermal-mechanical reliability is a big issue. The coefficient of thermal expansion(CTE) of copper, silicon and siliconoxide is about 17.5 × 10-6/°C 2.5×10-6/°C, 0.6×10-6/°C respectively. So when the TSV is subjected to thermal cycling load, large stress and strain would be created at the interface of the materials. In this work, Finite Element(FE) method was used to investigate the thermal-mechanical reliability of TSV. It is found the critical location is the junction between the overlaying flange Cu pad and the SIO2. And as the height of overlaying flange Cu pad decreases from 6μm to 2μm, the equivalent plastic strain decreases from 0.0195 to 0.0056. So the TSV with lower overlaying flange Cu pad would be more reliable. we also investigated reliability of blind hole. The bottom of the via is another critical location due to the mismatch of CTE. But the reliability is not sensitive to the depth of the blind hole. Finally, we investigated the effect of the geometry of the solder on the reliability. When the solder is hourglass joint and its width increases, the shear plastic strain is not sensitive to the width of solder. However, when the solder is spherical joint and its width increases, the shear plastic strain at the critical location increases significantly. Therefore, the reliability of spherical solder joint is much sensitive to its shape. And when the solder is cylinder column, the shear plastic strain is minimal.
Keywords
finite element analysis; plastic deformation; semiconductor device reliability; solders; thermal expansion; three-dimensional integrated circuits; TSV; blind hole depth; cylinder column; equivalent plastic strain; finite element method; shear plastic strain; siliconoxide; size 2 mum; size 6 mum; spherical solder joint; thermal cycling load; thermal expansion; thermal-mechanical reliability; through silicon via; Copper; Flanges; Plastics; Reliability; Strain; Stress; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
Conference_Location
Lake Buena Vista, FL
ISSN
0569-5503
Print_ISBN
978-1-61284-497-8
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2011.5898734
Filename
5898734
Link To Document