Title :
Experimental survey of semiconductor power device operation at low temperature
Author :
Hong, Ki Bum ; Jaeger, Richard C.
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
Abstract :
The authors report the results of an initial study of the behavior of various semiconductor power devices down to 77 K, including MOS, bipolar, and merged MOS/bipolar structures. It is found that all the devices tested continue to exhibit usable static characteristics at temperatures down to 77 K. As one might expect, the characteristics of power MOSFETs improve as temperature is reduced, and MOSFETs can be useful over the full temperature range 300 K-77 K. Even devices with bipolar structures, such as the bipolar junction transistor, silicon-controlled rectifier, and IGBT, continue to operate down to liquid-nitrogen temperature
Keywords :
bipolar transistors; insulated gate field effect transistors; low-temperature techniques; power transistors; semiconductor device testing; thyristors; 77 to 300 K; IGBT; bipolar junction transistor; low temperature; merged MOS/bipolar structures; power MOSFETs; semiconductor power device operation; silicon-controlled rectifier; static characteristics; Bipolar transistors; Circuits; High temperature superconductors; MOSFETs; Microelectronics; Schottky diodes; Semiconductor diodes; Temperature distribution; Thyristors; Voltage;
Conference_Titel :
Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on
Conference_Location :
Burlington, VT
DOI :
10.1109/LTSE.1989.50190
