DocumentCode
1732377
Title
A New Technique For Quantitative Determination Of The Stress Profile Along The Depth Of P+ Silicon Films
Author
Yang, E.H. ; Yang, S.S.
Author_Institution
AJOU University
Volume
2
fYear
1995
Firstpage
68
Lastpage
71
Keywords
Atomic layer deposition; Atomic measurements; Boron; Etching; Oxidation; Residual stresses; Semiconductor films; Silicon; Tensile stress; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors and Actuators, 1995 and Eurosensors IX.. Transducers '95. The 8th International Conference on
Print_ISBN
91-630-3473-5
Type
conf
DOI
10.1109/SENSOR.1995.721746
Filename
721746
Link To Document