DocumentCode :
1732377
Title :
A New Technique For Quantitative Determination Of The Stress Profile Along The Depth Of P+ Silicon Films
Author :
Yang, E.H. ; Yang, S.S.
Author_Institution :
AJOU University
Volume :
2
fYear :
1995
Firstpage :
68
Lastpage :
71
Keywords :
Atomic layer deposition; Atomic measurements; Boron; Etching; Oxidation; Residual stresses; Semiconductor films; Silicon; Tensile stress; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors and Actuators, 1995 and Eurosensors IX.. Transducers '95. The 8th International Conference on
Print_ISBN :
91-630-3473-5
Type :
conf
DOI :
10.1109/SENSOR.1995.721746
Filename :
721746
Link To Document :
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