DocumentCode
1732557
Title
Measurement of the silicon resistivity at very high temperature with junction isolated van der Pauw structures
Author
Corvasce, C. ; Ciappa, M. ; Barlini, D. ; Illien, F. ; Fichtner, W.
Author_Institution
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Volume
1
fYear
2004
Firstpage
133
Abstract
The limits of the traditional experiment approach to extract resistivity in junction-isolated samples are discussed basing both on physical simulations and on extensive experimental data. Several optimization criteria to design van der Pauw resistors and a related characterization procedure are proposed and experimentally validated in order to extend the extraction of the resistivity up to 500°C.
Keywords
calibration; electrical resistivity; electrostatic discharge; resistors; silicon; ESD; TCAD calibration; junction isolated van der Pauw structures; optimization criteria; resistivity extraction; silicon resistivity measurement; van der Pauw resistors; van der Pauw technique; Conductivity; Density estimation robust algorithm; Electrical resistance measurement; Failure analysis; Predictive models; Resistors; Robustness; Silicon; Temperature distribution; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Instrumentation and Measurement Technology Conference, 2004. IMTC 04. Proceedings of the 21st IEEE
ISSN
1091-5281
Print_ISBN
0-7803-8248-X
Type
conf
DOI
10.1109/IMTC.2004.1351013
Filename
1351013
Link To Document