Title :
A novel method for characterizing degradation of MOSFETs caused by hot-carriers
Author :
Acovic, Alexandre ; Dutoit, Michel ; Ilegems, Marc
Author_Institution :
Inst. for Micro- & Optoelectron., ETH, Lausanne, Switzerland
Abstract :
A novel method for characterizing HC (hot carrier) degradation in MOSFETs, based on the measurement of the field-induced drain-substrate tunnel diode at 77 K, is proposed. This method is applied to MOSFETs stressed at 300 K and 77 K. The measurements demonstrate the creation of interface states directly above the n+ zone in NMOSFETs and trapped negative charge in its vicinity. In PMOSFETs damage occurs closer to the channel. It is also shown that the greater degradation of the electrical characteristics of NMOSFETs during HC stress at low temperature is not solely due to the increased effective damage (interface states or trapped charge), but is also due to the increased effects of a given damage
Keywords :
electron traps; hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device testing; 300 K; 77 K; MOSFETs; NMOSFETs; PMOSFETs; electrical characteristics; field-induced drain-substrate tunnel diode; hot carrier degradation characterisation; interface states; n+ zone; trapped negative charge; Charge measurement; Current measurement; Degradation; Diodes; Electric variables; Hot carriers; Interface states; MOSFETs; Stress measurement; Temperature;
Conference_Titel :
Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on
Conference_Location :
Burlington, VT
DOI :
10.1109/LTSE.1989.50194
