Title :
Thermal modeling for Silicon-on-Sapphire (SOS) based power amplifier design in wireless communication
Author :
Yang, John Zhiyuan ; Lee, Shing
Author_Institution :
Peregrine Semicond., San Diego, CA, USA
Abstract :
In SOS (Silicon-On-Sapphire) based power amplifier design questions such as how the thermal performance will be after the chip being packaged, how can improvement be made through optimizing device design including the transistor layout, via, trace and I/O pads arrangement etc, are always confronted by device designers. In this paper a novel thermal modeling method has been proposed in which the micro-structures of chip and the macro-structure of package coexist in the model. The impact of device microstructure on thermal dissipation will be reflected in the final package thermal modeling result directly. It is an efficient way to assist device designers to optimize chip design for thermal performance improvement of the final package.
Keywords :
circuit layout; electronics packaging; power amplifiers; radiocommunication; silicon-on-insulator; I-O pads arrangement; device microstructure; final package thermal modeling; macrostructure; power amplifier design; silicon-on-sapphire; thermal dissipation; transistor layout; wireless communication; Frequency measurement; Microstructure; Performance evaluation; Semiconductor device modeling; Solid modeling; Temperature measurement; Transistors;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-61284-497-8
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2011.5898784