• DocumentCode
    1733580
  • Title

    Thermal modeling for Silicon-on-Sapphire (SOS) based power amplifier design in wireless communication

  • Author

    Yang, John Zhiyuan ; Lee, Shing

  • Author_Institution
    Peregrine Semicond., San Diego, CA, USA
  • fYear
    2011
  • Firstpage
    1958
  • Lastpage
    1962
  • Abstract
    In SOS (Silicon-On-Sapphire) based power amplifier design questions such as how the thermal performance will be after the chip being packaged, how can improvement be made through optimizing device design including the transistor layout, via, trace and I/O pads arrangement etc, are always confronted by device designers. In this paper a novel thermal modeling method has been proposed in which the micro-structures of chip and the macro-structure of package coexist in the model. The impact of device microstructure on thermal dissipation will be reflected in the final package thermal modeling result directly. It is an efficient way to assist device designers to optimize chip design for thermal performance improvement of the final package.
  • Keywords
    circuit layout; electronics packaging; power amplifiers; radiocommunication; silicon-on-insulator; I-O pads arrangement; device microstructure; final package thermal modeling; macrostructure; power amplifier design; silicon-on-sapphire; thermal dissipation; transistor layout; wireless communication; Frequency measurement; Microstructure; Performance evaluation; Semiconductor device modeling; Solid modeling; Temperature measurement; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-61284-497-8
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2011.5898784
  • Filename
    5898784