DocumentCode
1733580
Title
Thermal modeling for Silicon-on-Sapphire (SOS) based power amplifier design in wireless communication
Author
Yang, John Zhiyuan ; Lee, Shing
Author_Institution
Peregrine Semicond., San Diego, CA, USA
fYear
2011
Firstpage
1958
Lastpage
1962
Abstract
In SOS (Silicon-On-Sapphire) based power amplifier design questions such as how the thermal performance will be after the chip being packaged, how can improvement be made through optimizing device design including the transistor layout, via, trace and I/O pads arrangement etc, are always confronted by device designers. In this paper a novel thermal modeling method has been proposed in which the micro-structures of chip and the macro-structure of package coexist in the model. The impact of device microstructure on thermal dissipation will be reflected in the final package thermal modeling result directly. It is an efficient way to assist device designers to optimize chip design for thermal performance improvement of the final package.
Keywords
circuit layout; electronics packaging; power amplifiers; radiocommunication; silicon-on-insulator; I-O pads arrangement; device microstructure; final package thermal modeling; macrostructure; power amplifier design; silicon-on-sapphire; thermal dissipation; transistor layout; wireless communication; Frequency measurement; Microstructure; Performance evaluation; Semiconductor device modeling; Solid modeling; Temperature measurement; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
Conference_Location
Lake Buena Vista, FL
ISSN
0569-5503
Print_ISBN
978-1-61284-497-8
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2011.5898784
Filename
5898784
Link To Document