A two-dimensional model for the kink in nMOSTs operating at liquid helium temperatures

Author

Simeon, E. ; Deferm, L. ; Claeys, C.

Author_Institution

IMEC, Leuven, Belgium

fYear

1989

Firstpage

123

Lastpage

127

Abstract

A model for the kink in MOSTs (MOS transistors) operating at liquid-helium temperatures is presented. It is based on a calculation of the multiplication current as a function of temperature. Subsequently the increase in substrate potential and in drain current is determined, taking account of the current flow through the highly resistive, frozen-out substrate/well. This model makes it possible to explain the temperature and geometry dependence of the kink and can be extended to the case of (cryogenic) SOI (silicon on insulator). With this model it is possible to evaluate and optimize the influence of technological and design parameters for cryogenic applications. It is expected that the well/contact separation plays a crucial role in kink behavior; furthermore, different behavior is expected for n-well technology compared with p-well

Keywords

cryogenics; insulated gate field effect transistors; semiconductor device models; 4.2 K; MOS transistors; MOSTs; cryogenic SOI; cryogenic applications; current flow; drain current; frozen-out substrate/well; geometry dependence; kink; multiplication current; n-well technology; p-well technology; substrate potential; temperature dependence; two-dimensional model; well/contact separation; Contact resistance; Cryogenics; Geometry; Helium; Intrusion detection; MOS devices; MOSFETs; Solid modeling; Temperature dependence; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on

Conference_Location

Burlington, VT

Type

conf

DOI

10.1109/LTSE.1989.50195

Filename

50195